Fast 2D/3D laser-based crystallographic orientation mapping solutions.
|qRICO 100||qRICO 200||qRICO 300||qRICO 400|
|2D and 3D analysis||2D and 3D analysis||2D and 3D analysis||2D and 3D analysis|
|Quantitative orientation mapping||Quantitative orientation mapping||Quantitative orientation mapping||Quantitative orientation mapping|
|Confocal Raman microscopy||Confocal Raman microscopy||Confocal Raman microscopy||Confocal Raman microscopy|
|Super resolution Raman microscopy||Super resolution Raman microscopy||Super resolution Raman microscopy|
|Super resolution orientation mapping||Super resolution orientation mapping|
|Resonance Raman microscopy|
|Resonance Raman orientation mapping|
|Single laser source||Single laser source||Two laser sources||Four laser sources|
|Micro positioning stage||Micro positioning stage||Micro positioning stage||Micro positioning stage|
|Nano positioning stage||Nano positioning stage||Nano positioning stage|
qRICO technology is based on application of polarized Raman microscopy principles for determination of crystallographic orientation of a sample. Three polarized laser beams with polarization state 0°, 45° and 90° interact with a multigrain material which scattering properties dependent on local crystallographic orientation and described by the Raman tensor. The scattered Raman signal from the three incident lasers is divided into nine backscattering channels (six on-axis and three off-axis). This is done with three polarization analyzers with orientations 0° and 90° for on-axis Raman scattering detection and 90° for off-axis Raman scattering detection. The information obtained from the nine Raman channels is used for determining the crystallographic orientation of a selected local volume. 2D or 3D orientation mapping is obtained by scanning the sample along X, Y, Z axes with respect to the incident beams.
To be confident in accuracy of a our new method, we compared orientation map of polycrystalline silicon sample obtained with qRICO technology (Figure a) with the map of the same sample area obtained using electron backscatter diffraction (EBSD) technique (Figure b). A map of the local orientation difference (misorientation angle) exhibits an average orientation difference of ~2.1° (Figure c). We argue that this error is dominated by a geometrical distortions appeared in EBSD data. In order to minimize this effect we corrected the EBDS map for distortions and removed grain boundaries. Artifact which are still present on the map (Figure c) may be connected with orientation-dependent ambiguity of qRICO method and an orientation determination error of EBSD. Overall accuracy of qRICO method is comparable to widely-used EBSD technique.
Demonstration of polycrystalline Si mapping with simultaneous registration of several polarized channels in qRICO software
Experimental demonstration of intensity variation in polarized Raman spectral responses versus monocrystalline CBZD drug particle rotation
Experimental demonstration of intensity variation in polarized Raman spectral responses versus monocrystalline sapphire plates rotation
Volumetric orientation map of polycrystalline sapphire sample measured with 3D-qRICO technology
Our technology is uniquely differentiated and protected by 4 patents.